zxtc2063e6 document number: ds33648 rev : 4 - 2 1 of 9 www.diodes.com may 2015 ? diodes incorporated zxtc2063e6 advance information a product line of diodes incorporated 4 0 v complementary medium power transistor in sot26 feature s ? npn + pnp c ombination ? bv ceo > 40 ( - 40) v ? bv eco > 6 ( - 3)v ? i cm = 9 ( - 9 ) a peak pulse current ? v ce(sat) < 60 ( - 90)mv @ 1a ? r ce(sat) = 38 (58)m ? ? totally lead - free & fully rohs c ompliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability description advanced process capability is used to achieve this high performance device. combining npn and pnp transistors in the sot26 pa ckage provides a compact solution for the intended applications. mechanical data ? case: sot26 ? case material: m olded p lastic, green m olding c ompound ? ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? te rminals: finish C matte tin plated leads, s olderabl e pe r mil - std - 202, method 208 ? weight: 0.015 grams ( a pproximate) applications ? mosfet and igbt g ate d riving ? motor d rive ordering information (note 4 ) product marking reel size (inches) tape width (mm) quantity per reel zxtc2063e6ta 2063 7 8 3,000 notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.d iodes.com/ for more information about diodes incorpor ateds definitions of ha logen and antimony free, "green" and lead - free. 3. halogen and antimony free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com . marking information sot26 date code key year 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 code c d e f g h i j k l m month jan feb ma r apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view device symbol sot 26 top view pin - out 2063 = product type marking code ym = date code marking y or y = year (ex: c = 2015) m or m = month (ex: 9 = september) 2063 c 1 e 1 b 1 c 2 e 2 b 2 q 1 q 2 c 1 b 1 c 2 e 1 b 2 e 2 ym
zxtc2063e6 document number: ds33648 rev : 4 - 2 2 of 9 www.diodes.com may 2015 ? diodes incorporated zxtc2063e6 advance information a product line of diodes incorporated absolute maximum ratings C q1 (npn transistor) (@ t a = +25 c, unless otherwise specified.) characteristic symbol value unit collector - base voltage v cbo 130 v coll ector - emitter voltage v ceo 40 v emitter - collector voltage (reverse blocking) v eco 6 v emitter - base voltage v ebo 7 v continuous collector current i c 3.5 a peak pulsed collector current i cm 9 a base current i b 1 a absolute maximum ratings C q2 (pnp transistor) (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit collector - base voltage v cbo - 45 v collector - emitter voltage v ceo - 40 v emitter - collector voltage (reverse blocking) v eco - 3 v emitter - base voltage v ebo - 7 v conti nuous collector current i c - 3 a peak pulsed collector current i cm - 9 a base current i b - 1 a thermal characteristics (@ t a = +25 c, unless otherwise specified.) characteristic symbol value unit power dissipation linear derating factor (note s 5 & 9 ) p d 0.7 5.6 w mw/ c (note s 6 & 9 ) 0.9 7.2 (note s 6 & 10 ) 1.1 8.8 (note s 7 & 9 ) 1.1 8.8 (note s 8 & 9 ) 1.7 13.6 thermal resistance, junction to ambient (note s 5 & 9 ) r ? ja 179 c/w (note s 6 & 9 ) 139 (note s 6 & 10 ) 113 (note s 7 & 9 ) 113 (note s 8 & 9 ) 73 thermal resistance, junction to lead (note 11 ) r ? jl 87.58 operating and storage temperature range t j , t stg - 55 to +150 c esd ratings (note 12 ) characteristic symbol value unit jedec class electrostatic discharge - human body model esd hbm 4 ,000 v 3 a electrostatic discharge - machine model esd mm 400 v c notes: 5. for a device surface mounted on 15mm x 15mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions ; the device is measured when operating in a st eady - state condition. 6. same as n ote (5), except the d evice is surface mounted on 25mm x 25mm 1oz copper. 7. same as n ote (5), except the device is surface mounted on 50mm x 50mm 2oz copper . 8. same as n ote (7), except the device is measured at t < 5 s econds. 9 . for device with one active die, both collectors attached to a common heat sink. 10 . for device with two active dice running at equal power, split heat sink 50% to each collector. 11 . thermal resistance from junction to solder - point (at the end of the collector lead). 12. refer to jedec specification jesd22 - a114 and jesd22 - a115.
zxtc2063e6 document number: ds33648 rev : 4 - 2 3 of 9 www.diodes.com may 2015 ? diodes incorporated zxtc2063e6 advance information a product line of diodes incorporated thermal characteristics and derating information 100 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 70 80 90 100 110 0.1 1 10 10m 100m 1 10 100m 1 10 10m 100m 1 10 npn t amb =25c 50mm x 50mm 2oz fr4 one active die v ce(sat) limit 100s 1ms 10ms 100ms 1s dc safe operating area i c collector current (a) v ce collector-emitter voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 50mm x 50mm 2oz fr4 one active die 50mm x 50mm 2oz fr4 one active die t<5secs 25mm x 25mm 1oz fr4 one active die 25mm x 25mm 1oz fr4 two active die 15mm x 15mm 1oz fr4 one active die derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 1 10 100 safe operating area single pulse t amb =25c 50mm x 50mm 2oz fr4 one active die pulse power dissipation pulse width (s) max power dissipation (w) d=0.1 d=0.05 single pulse d=0.2 d=0.5 t amb =25c 50mm x 50mm 2oz fr4 one active die transient thermal impedance pulse width (s) thermal resistance (c/w) pnp t amb =25c 50mm x 50mm 2oz fr4 one active die 100s 1ms 10ms 100ms 1s dc v ce(sat) limit -v ce collector-emitter voltage (v) -i c collector current (a)
zxtc2063e6 document number: ds33648 rev : 4 - 2 4 of 9 www.diodes.com may 2015 ? diodes incorporated zxtc2063e6 advance information a product line of diodes incorporated electrical characteristics C q1 (npn transistor) (@ t a = +25c, unless otherwis e specified.) characteristic symbol min typ max unit test condition off characteristics collector - base breakdown voltage bv cbo 130 170 ? c = 10 0 a, i e = 0 collector - emitter breakdown voltage (note 1 3 ) b v ceo 40 63 ? c = 10 ma, i b = 0 emitter - base breakdown voltage b v ebo 7 8.3 ? e = 10 0 a, i c = 0 emitter - c ollector b reakdown v oltage (reverse blocking) bv ecx 6 7.4 ? e =100a, r bc < 1k ? bc > - 0.25v emitter - c ollector b reakdown v oltage (base open) bv eco 6 7.4 ? e = 100 a collector cutoff current i cbo ? v cb = 10 0 v v cb = 10 0 v, t a = + 10 0c collector cutoff current i ebo ? e b = 5.6v on characteristics (note 1 3 ) dc current gain h fe 300 280 40 450 400 60 900 ? c = 10 m a, v ce = 2 v i c = 1 . 0 a, v ce = 2 v i c = 3.5 a, v ce = 2v collector - emitter saturation voltage v ce(sat) ? 60 110 220 195 m v i c = 1.0 a, i b = 100 ma i c = 1.0 a, i b = 20 ma i c = 2.0 a, i b = 40 ma i c = 3.5 a, i b = 350 ma base - emitter saturation voltage v be(sat) ? 1 , 050 m v i c = 3 .5 a, i b = 350 ma base - emitter turn - on voltage v be(on) ? ? c = 3.5a, v ce = 2v small signal characteristics output capacitance c obo ? cb = 10v, f = 1.0mhz current gain - bandwidth product f t ? ? ce = 10 v, i c = 5 0ma, f = 100mhz delay time t d ? ? cc = 10v , i c = 1a, i b1 = i b2 = 10ma rise time t r ? ? s ? ? f ? ? note : 1 3 . measured under pulsed conditions. pulse width ? 300 s. duty cycle ? 2%.
zxtc2063e6 document number: ds33648 rev : 4 - 2 5 of 9 www.diodes.com may 2015 ? diodes incorporated zxtc2063e6 advance information a product line of diodes incorporated electrical char acteristics C q2 (pnp transistor) (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics collector - base breakdown voltage bv cbo - 45 - 80 ? c = - 10 0 a, i e = 0 collector - emitter breakdown vo ltage (note 1 4 ) b v ceo - 40 - 65 ? c = - 10 ma, i b = 0 emitter - base breakdown voltage b v ebo - 7 - 8.3 ? e = - 10 0 a, i c = 0 emitter - c ollector b reakdown v oltage (reverse blocking) bv ecx - 6 - 7.4 ? e = 100a, r bc < 1k ? bc < - 0.25v emitte r - c ollector b reakdown v oltage (base open) bv eco - 3 - 8.7 ? e = - 100 a collector cutoff current i cbo ? ? ? v cb = - 36 v v cb = - 36 v, t a = + 10 0c collector cutoff current i ebo ? eb = - 5.6v on characteristics (note 1 4 ) dc curr ent gain h fe 300 200 2 0 450 280 5 0 900 ? ? ? c = - 10 m a, v ce = - 2 v i c = - 1.0 a, v ce = - 2 v i c = - 3.0 a, v ce = - 2v collector - emitter saturation voltage v ce(sat) ? ? ? ? ? c = - 1.0 a, i b = - 100 ma i c = - 1.0 a, i b = - 20 ma i c = - 3 .0 a, i b = - 300 ma base - emitter saturation voltage v be(sat) ? - 1 , 00 0 m v i c = - 3.0 a, i b = - 30 0 ma base - emitter turn - on voltage v be(on) ? ? c = - 3.0 a, v ce = - 2v small signal characteristics output capacitance c obo ? cb = - 10v, f = 1.0 mhz current gain - bandwidth product f t ? ? ce = - 10 v, i c = - 5 0ma, f = 100mhz delay time t d ? ? cc = - 10v , i c = - 1a, i b1 = i b2 = - 10ma rise time t r ? ? s ? ? f ? ? note : 1 4 . measured under pulsed conditions. pulse width ? 300 s. duty cycle ? 2%.
zxtc2063e6 document number: ds33648 rev : 4 - 2 6 of 9 www.diodes.com may 2015 ? diodes incorporated zxtc2063e6 advance information a product line of diodes incorporated typical electrical characteristics C q1 (npn transistor) (@ t a = +25 c, unless otherwise specified.) 1m 10m 100m 1 10 1m 10m 100m 1 10m 100m 1 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 1.2 1m 10m 100m 1 10 0.2 0.4 0.6 0.8 1.0 0 75 150 225 300 375 450 525 600 675 750 825 i c /i b =100 v ce(sat) v i c tamb=25c i c /i b =50 i c /i b =20 i c /i b =10 v ce(sat) (v) i c collector current (a) 150c v be(sat) v i c i c /i b =10 100c 25c -55c v ce(sat) (v) i c collector current (a) 150c h fe v i c v ce =2v -55c 25c 100c normalised gain i c collector current (a) 150c 25c v ce(sat) v i c i c /i b =10 100c -55c v be(sat) (v) i c collector current (a) 150c v be(on) v i c v ce =2v 100c 25c -55c v be(on) (v) i c collector current (a) typical gain (h fe )
zxtc2063e6 document number: ds33648 rev : 4 - 2 7 of 9 www.diodes.com may 2015 ? diodes incorporated zxtc2063e6 advance information a product line of diodes incorporated typical electrical ch aracteristics C q2 (pnp transistor) (@ t a = +25c, unless otherwise specified.) 1m 10m 100m 1 10 10m 100m 1 10m 100m 1 0.0 0.1 0.2 0.3 0.4 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 1.2 0 100 200 300 400 500 600 700 800 i c /i b =100 v ce(sat) v i c tamb=25c i c /i b =50 i c /i b =20 i c /i b =10 - v ce(sat) (v) - i c collector current (a) 100c v be(sat) v i c i c /i b =10 150c 25c -55c - v ce(sat) (v) - i c collector current (a) 150c h fe v i c v ce =2v -55c 25c 100c normalised gain - i c collector current (a) 150c 25c v ce(sat) v i c i c /i b =10 100c -55c - v be(sat) (v) - i c collector current (a) 150c v be(on) v i c v ce =2v 100c 25c -55c - v be(on) (v) - i c collector current (a) typical gain (h fe )
zxtc2063e6 document number: ds33648 rev : 4 - 2 8 of 9 www.diodes.com may 2015 ? diodes incorporated zxtc2063e6 advance information a product line of diodes incorporated package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. sot26 sot26 dim min max typ a1 0 .013 0. 10 0.0 5 a 2 1.00 1.30 1.10 a3 0.70 0.80 0.75 b 0. 35 0. 50 0. 38 c 0.10 0.20 0.15 d 2.90 3.10 3.00 e - - 0.95 e1 - - 1.90 e 2.70 3.00 2.80 e 1 1.50 1.70 1.60 l 0. 35 0. 55 0. 40 a - - 8 a1 - - 7 all dimensions in mm suggested pad layou t please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. sot26 dimensions value (in mm) c 2.40 c 1 0.95 g 1.60 x 0.55 y 0.80 y1 3.20 a1 d e e1 e b a2 a1 seating plane l c a e1 a3 c1 y1 g x y c
zxtc2063e6 document number: ds33648 rev : 4 - 2 9 of 9 www.diodes.com may 2015 ? diodes incorporated zxtc2063e6 advance information a product line of diodes incorporated important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this docu ment and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or tradema rk rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incor porated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any cl aim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative forma t released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes i ncorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - re lated information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critica l, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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